Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
نویسندگان
چکیده
Abstract A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch approximately 100 μm. Three analog were calibrated laboratory radioactive sources and tested 180 GeV/c pion beamline at CERN SPS. detection efficiency (99.9 -0.2 +0.1 )% was measured together time resolution (36.4 ± 0.8) ps highest preamplifier bias current working point 150 μA sensor voltage 160 V. also characterized lower current.
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ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2022
ISSN: ['1748-0221']
DOI: https://doi.org/10.1088/1748-0221/17/02/p02019